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1

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N.

Journal:

Russian Physics Journal

Year:

2018

Language:

english

File:

PDF, 172 KB

english, 2018

2

Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures

Romanov, Ivan S., Prudaev, Ilya A., Kopyev, Viktor V.

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 434 KB

english, 2016

3

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

Kopyev, V. V., Prudaev, I. A., Avdochenko, B. I.

Year:

2015

Language:

english

File:

PDF, 263 KB

english, 2015

4

The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Kopyev, V V, Smirnova, T E, Oleinik, V L, Prudaev, I A

Journal:

Journal of Physics Conference Series

Year:

2018

Language:

english

File:

PDF, 771 KB

english, 2018

5

The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells

Romanov, I. S., Prudaev, I. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 315 KB

english, 2013

6

Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

I. S. Romanov,I. A. Prudaev,А. А. Marmalyuk,V. A. Kureshov…

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 382 KB

english, 2014

7

Decomposition of a supersaturated solid solution of Fe in GaAs

I. A. Prudaev,S. S. Khludkov,A. K. Gutakovskii,V. A. Novikov…

Journal:

Inorganic Materials

Year:

2012

Language:

english

File:

PDF, 1.10 MB

english, 2012

8

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Photoelectrical characteristics of TiO2-Si heterostructures

Kalygina, V.M., Egorova, I. S., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

Language:

english

File:

PDF, 332 KB

english, 2015

9

Electron Irradiation Degradation of AlGaInP/GaAs Light-Emitting Diodes

Brudnyi, Valentin, Prudaev, Ilya, Oleinik, Vladimir, Marmaluk, Alexander

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 1013 KB

english, 2018

10

Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

Prudaev, A. I., Verkholetov, M. G.

Journal:

Technical Physics Letters

Year:

2019

Language:

english

File:

PDF, 472 KB

english, 2019

11

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance

Prudaev, I.A., Skakunov, M.S., Khludkov, S.S.

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009

12

A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, I. V. Ivonin

Journal:

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

13

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Conduction mechanism of metal-TiO2-Si structures

Kalygina, V.M., Egorova, I. M., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

Language:

english

File:

PDF, 1019 KB

english, 2015

14

Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

Prudaev, I. A., Romanov, I. S., Kop’ev, V. V., Shirapov, S. B., Тоlbanov, О. P., Khludkov, S. S.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 396 KB

english, 2013

15

Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate

Prudaev, I. A., Romanov, I. S., Novikov, Vad. A., Marmalyuk, А. А., Kureshov, V. A., Sabitov, D. R., Маzalov, А. V.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 563 KB

english, 2014

16

Hopping Transport of Charge Carriers in LEDs Based on Multiple InGaN/GaN Quantum Wells

Prudaev, I. А., Zubrilkina, Yu. L., Baktybaev, А. А., Romanov, I. S.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 475 KB

english, 2015

17

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Properties of metall-TiO2-Si structures on an alternating signal

Kalygina, V.M., Makarov, V. A., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

Language:

english

File:

PDF, 445 KB

english, 2015

18

Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Oleynik, V L, Prudaev, I A, Novikov, Vad A, Ryaboshtan, Yu L, Gorlachuk, P V

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 1.04 MB

english, 2014

19

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Prudaev, I. A., Kopyev, V. V., Romanov, I. S., Oleynik, V. L.

Journal:

Year:

2017

Language:

english

File:

PDF, 403 KB

english, 2017

20

[IEEE 2019 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON) - Novosibirsk, Russia (2019.10.21-2019.10.27)] 2019 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON) - Switching Characteristics of Avalanche GaAs S-diodes When Exposed to Voltage Pulses With a Subnanosecond Front

Konev, Vladimir, Barmin, Valery, Priputnev, Pavel, Romanchenko, Ilya, Maltsev, Sergei, Ilya, Prudaev

Year:

2019

Language:

english

File:

PDF, 6.03 MB

english, 2019

21

Charge Carrier Transport in LEDs Based on Multiple (AlxGa1–x)0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells

Prudaev, I. A., Oleinik, V. L., Romanov, I. S., Brudnyi, V. N., Ryaboshtan, Yu. L., Gorlachuk, P. V., Marmalyuk, А. А.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 884 KB

english, 2014

22

ChemInform Abstract: Gallium Nitride as a Material for Spintronics

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Year:

2013

File:

PDF, 17 KB

2013

23

Electroluminescence Spectra of “Red” LED AlGaInP / GaAs Structures

Marmalyuk, А. А., Gorlachuk, P. V., Ryaboshtan, Yu. L., Brudnyi, V. N., Prudaev, I. А., Romanov, I. S., Lelekov, М. А.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 380 KB

english, 2013

24

[IEEE 2007 Siberian Conference on Control and Communications - Tomsk, Russia (2007.04.20-2007.04.21)] 2007 Siberian Conference on Control and Communications - Subnanosecond Optoelectronic Switch

Prudaev, I.A., Skakunov, M.S., Tolbanov, O.P.

Year:

2007

Language:

english

File:

PDF, 415 KB

english, 2007

25

Conduction in titanium dioxide films and metal–TiO2–Si structures

Kalygina, V. M., Egorova, I. M., Prudaev, I. A., Tolbanov, O. P.

Journal:

Year:

2016

Language:

english

File:

PDF, 415 KB

english, 2016

26

A Solid-State Sub-Nanosecond Microwave Switch

B. I. Avdochenko,I. A. Prudaev,O. P. Tolbanov,P. Yu. Chumerin…

Journal:

Russian Physics Journal

Year:

2016

Language:

english

File:

PDF, 1.06 MB

english, 2016

27

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

Romanov, I. S., Prudaev, I. A., Kopyev, V. V.

Journal:

Russian Physics Journal

Year:

2018

Language:

english

File:

PDF, 256 KB

english, 2018

28

Charge-carrier lifetimes in high-resistance GaAs doped by chromium diffusion

D. L. Budnitskii, V. A. Novikov, O. P. Tolbanov, I. A. Prudaev

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 422 KB

english, 2008

29

Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation

Prudaev, Ilya, Sarkisov, Sergey, Tolbanov, Oleg, Kosobutsky, Alexey

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 537 KB

english, 2015

30

Deep centers in TiO2-Si structures

Kalygina, V. M., Petrova, Yu. S., Prudaev, I. A., Tolbanov, O. P., Tsupiy, S. Yu.

Journal:

Year:

2015

Language:

english

File:

PDF, 591 KB

english, 2015

31

Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide

V. M. Kalygina,Yu. S. Petrova,I. A. Prudaev,O. P. Tolbanov

Journal:

Russian Physics Journal

Year:

2016

Language:

english

File:

PDF, 738 KB

english, 2016

32

Current limitation inA3B5nitride light-emitting diodes under forward bias

Prudaev, I. A., Ivonin, I. V., Tolbanov, O. P.

Journal:

Russian Physics Journal

Year:

2012

Language:

english

File:

PDF, 76 KB

english, 2012

33

Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping

Prudaev, I. A., Romanov, I. S., Kopyev, V. V., Brudnyi, V. N., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

Journal:

Russian Physics Journal

Year:

2016

Language:

english

File:

PDF, 532 KB

english, 2016

34

Resonant tunneling of charge carriers in InGaN/GaN superlattice

Kopyev, V V, Prudaev, I A, Oleynik, V L

Journal:

Journal of Physics Conference Series

Year:

2017

Language:

english

File:

PDF, 980 KB

english, 2017

35

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Prudaev, I. A., Golygin, I. Yu., Shirapov, S. B., Romanov, I. S., Khludkov, S. S., Tolbanov, O. P.

Journal:

Year:

2013

Language:

english

File:

PDF, 268 KB

english, 2013

36

Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

Prudaev, I. A., Kopyev, V. V., Romanov, I. S., Brudnyi, V. N.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 470 KB

english, 2015

37

Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam

Burachenko, A. G., Beloplotov, D. V., Prudaev, I. A., Sorokin, D. A., Tarasenko, V. F., Tolbanov, O. P.

Journal:

Optics and Spectroscopy

Year:

2017

Language:

english

File:

PDF, 399 KB

english, 2017

38

[IEEE 2011 International Siberian Conference on Control and Communications (SIBCON 2011) - Krasnoyarsk, Russia (2011.09.15-2011.09.16)] 2011 International Siberian Conference on Control and Communications (SIBCON) - Switching delay of avalanche S-diodes in circuit with optical drive

Prudaev, I. A., Skakunov, M. S., Tolbanov, O. P., Khludkov, S. S., Degtyarenko, K. M.

Year:

2011

Language:

english

File:

PDF, 380 KB

english, 2011

39

Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kop’ev, V. V., Novikov, Vad. A., Маrmalyuk, А. А., Кureshov, V. А., Sabitov, D. R., Маzalov, А. V.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 719 KB

english, 2015

40

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

Romanov, I S, Prudaev, I A, Kopyev, V V, Marmalyuk, A A, Kureshov, V A, Sabitov, D R, Mazalov, A V

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 1.42 MB

english, 2014

41

Photoelectric characteristics of metal-Ga2O3-GaAs structures

Kalygina, V. M., Vishnikina, V. V., Petrova, Yu. S., Prudaev, I. A., Yaskevich, T. M.

Journal:

Year:

2015

Language:

english

File:

PDF, 504 KB

english, 2015

42

Diffusion and solubility of electrically active iron atoms in gallium arsenide

I. A. Prudaev, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 210 KB

english, 2008

43

Recombination Currents in Light-Emitting Diodes based on (AlxGa1–x)0.5In0.5P/(AlyGa1–y)0.5In0.5P Multiple Quantum Wells

Prudaev, I. А., Skakunov, M. S., Lelekov, М. А., Ryaboshtan, Yu. L., Gorlachuk, P. V., Marmalyuk, А. А.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 428 KB

english, 2013

44

[IEEE 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) - Tucson, AZ, USA (2014.9.14-2014.9.19)] 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) - Terahertz emission from InGaN/GaN multiple quantum well light-emitting diode heterostructures under two-photon excitation

Sarkisov, Sergey Yu., Prudaev, Ilya A., Kosobutsky, Alexey V., Tolbanov, Oleg P., Dunaevsky, Grigory E.

Year:

2014

Language:

english

File:

PDF, 275 KB

english, 2014

45

Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Kopyev, V V, Prudaev, I A, Romanov, I S

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 903 KB

english, 2014

46

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

I. A. Prudaev, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

47

A switching delay of avalanche S-diodes in optical-drive circuits

I. A. Prudaev, M. S. Skakunov, O. P. Tolbanov, S. S. Khludkov, K. M. Degtyarenko

Journal:

Instruments and Experimental Techniques

Year:

2011

Language:

english

File:

PDF, 159 KB

english, 2011

48

Transmission Spectra and Generation of Terahertz Pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe, and GaSe:S Structures

Bereznaya, S. A., Zarubin, A. N., Korotchenko, Z. V., Prudaev, I. A., Red’kin, R. A., Sarkisov, S. Yu., Tolbanov, O. P.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 475 KB

english, 2015

49

Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3(0001) LED Heterostructures

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kopyev, V. V., Novikov, Vad. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 256 KB

english, 2015

50

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - S-diode with optical control

Skakunov, M.S., Prudaev, I.A., Bachnaruk, A.A.

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

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